Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Bibliographische Detailangaben
Hauptverfasser: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Weitere Verfasser: Department of Electrical and Electronic Engineering, BRAC University
Format: Conference paper
Sprache:English
Veröffentlicht: © 2016 IEEE 2017
Schlagworte:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Online Zugang:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Online

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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