Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Dettagli Bibliografici
Autori principali: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Altri autori: Department of Electrical and Electronic Engineering, BRAC University
Natura: Conference paper
Lingua:English
Pubblicazione: © 2016 IEEE 2017
Soggetti:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Accesso online:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Accesso online

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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