Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Rannpháirtithe: Department of Electrical and Electronic Engineering, BRAC University
Formáid: Conference paper
Teanga:English
Foilsithe / Cruthaithe: © 2016 IEEE 2017
Ábhair:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Rochtain ar líne:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Ar líne

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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