Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor
This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/
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© 2016 IEEE
2017
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| Accés en línia: | http://hdl.handle.net/10361/8083 https://10.1109/TENCON.2016.7848543 |
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10361-80832018-07-25T10:23:09Z Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor Tasneem, Nujhat Adnan, Md. Mohsinur Rahman Hafiz, Md. Samzid Bin Department of Electrical and Electronic Engineering, BRAC University Logic gates Threshold voltage Capacitance-voltage characteristics Doping Silicon Junction less transistor This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/ This work presents the evaluation, as well as comparison of Capacitance-Voltage (C-V) characteristic and threshold voltage variation of two different structures of Junction Less Nanowire Transistor (JLNT), Double Gate (DG-JLNT) and Rectangular Gate (RG-JLNT). The self-consistent solver, which takes wave function penetration and other quantum mechanical (QM) effects into account, has been utilized here to establish the C-V characteristics. Then the threshold voltage has been extracted from the C-V curve. The variation in C-V characteristic and threshold voltage with respect to change in different device parameters for both structures of JLNT has also been explored and compared. The results demonstrate that the sensitivity of threshold voltage to variation in nanowire thickness, oxide thickness and doping concentration is higher in DG-JLNT than in RG-JLNT. Therefore, RG-JLNT exhibits performance superior to DG-JLNT in terms of control over channel potential and short channel behavior. Published 2017-04-30T06:28:05Z 2017-04-30T06:28:05Z 2017-02-08 Conference paper Tasneem, N., Adnan, M. M. R., Hafiz, M. S. B., & Khosru, Q. D. M. (2017). Comparative study of quantum mechanical capacitance voltage characteristics and threshold voltage of two different structures of junction less nanowire transistor. Paper presented at the IEEE Region 10 Annual International Conference, Proceedings/TENCON, 2761-2764. doi:10.1109/TENCON.2016.7848543 2761-2764 http://hdl.handle.net/10361/8083 https://10.1109/TENCON.2016.7848543 en http://ieeexplore.ieee.org/document/7848543/ © 2016 IEEE |
| institution |
Brac University |
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Institutional Repository |
| language |
English |
| topic |
Logic gates Threshold voltage Capacitance-voltage characteristics Doping Silicon Junction less transistor |
| spellingShingle |
Logic gates Threshold voltage Capacitance-voltage characteristics Doping Silicon Junction less transistor Tasneem, Nujhat Adnan, Md. Mohsinur Rahman Hafiz, Md. Samzid Bin Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor |
| description |
This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/ |
| author2 |
Department of Electrical and Electronic Engineering, BRAC University |
| author_facet |
Department of Electrical and Electronic Engineering, BRAC University Tasneem, Nujhat Adnan, Md. Mohsinur Rahman Hafiz, Md. Samzid Bin |
| format |
Conference paper |
| author |
Tasneem, Nujhat Adnan, Md. Mohsinur Rahman Hafiz, Md. Samzid Bin |
| author_sort |
Tasneem, Nujhat |
| title |
Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor |
| title_short |
Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor |
| title_full |
Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor |
| title_fullStr |
Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor |
| title_full_unstemmed |
Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor |
| title_sort |
comparative study of quantum mechanical capacitance voltage characteristics and threshold voltage of two different structures of junction less nanowire transistor |
| publisher |
© 2016 IEEE |
| publishDate |
2017 |
| url |
http://hdl.handle.net/10361/8083 https://10.1109/TENCON.2016.7848543 |
| work_keys_str_mv |
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| _version_ |
1814309337094422528 |