Transient anode voltage modeling of IGBT and its base doping profile investigation

Transient anode voltage modeling of IGBT and its base doping profile investigation

This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electron...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Das, Avijit, Md Ziaur Rahman, Khan
Muut tekijät: Department of Electrical and Electronic Engineering, BRAC University
Aineistotyyppi: Conference paper
Kieli:English
Julkaistu: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Aiheet:
Base doping concentration
Carrier storage region
Minority carrier lifetime
Parabolic approximation
Transient anode voltage
Linkit:http://hdl.handle.net/10361/6900

Internet

http://hdl.handle.net/10361/6900

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