Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Chi tiết về thư mục
Những tác giả chính: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Tác giả khác: Department of Electrical and Electronic Engineering, BRAC University
Định dạng: Conference paper
Ngôn ngữ:English
Được phát hành: © 2016 IEEE 2017
Những chủ đề:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Truy cập trực tuyến:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Internet

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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