Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor
This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/
| 主要な著者: | , , |
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| フォーマット: | Conference paper |
| 言語: | English |
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© 2016 IEEE
2017
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| オンライン･アクセス: | http://hdl.handle.net/10361/8083 https://10.1109/TENCON.2016.7848543 |