Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Άλλοι συγγραφείς: Department of Electrical and Electronic Engineering, BRAC University
Μορφή: Conference paper
Γλώσσα:English
Έκδοση: © 2016 IEEE 2017
Θέματα:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Διαθέσιμο Online:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Διαδίκτυο

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Παρόμοια τεκμήρια