Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Bibliografiset tiedot
Päätekijät: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Muut tekijät: Department of Electrical and Electronic Engineering, BRAC University
Aineistotyyppi: Conference paper
Kieli:English
Julkaistu: © 2016 IEEE 2017
Aiheet:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Linkit:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Internet

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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