Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

מידע ביבליוגרפי
Main Authors: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
מחברים אחרים: Department of Electrical and Electronic Engineering, BRAC University
פורמט: Conference paper
שפה:English
יצא לאור: © 2016 IEEE 2017
נושאים:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
גישה מקוונת:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

אינטרנט

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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