Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Detalles Bibliográficos
Autores principales: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Otros Autores: Department of Electrical and Electronic Engineering, BRAC University
Formato: Conference paper
Lenguaje:English
Publicado: © 2016 IEEE 2017
Materias:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Acceso en línea:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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