Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

书目详细资料
Main Authors: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
其他作者: Department of Electrical and Electronic Engineering, BRAC University
格式: Conference paper
语言:English
出版: © 2016 IEEE 2017
主题:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
在线阅读:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

因特网

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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