Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Podrobná bibliografie
Hlavní autoři: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Další autoři: Department of Electrical and Electronic Engineering, BRAC University
Médium: Conference paper
Jazyk:English
Vydáno: © 2016 IEEE 2017
Témata:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
On-line přístup:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Internet

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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