Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Manylion Llyfryddiaeth
Prif Awduron: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Awduron Eraill: Department of Electrical and Electronic Engineering, BRAC University
Fformat: Conference paper
Iaith:English
Cyhoeddwyd: © 2016 IEEE 2017
Pynciau:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Mynediad Ar-lein:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Rhyngrwyd

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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