Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
مؤلفون آخرون: Department of Electrical and Electronic Engineering, BRAC University
التنسيق: Conference paper
اللغة:English
منشور في: © 2016 IEEE 2017
الموضوعات:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
الوصول للمادة أونلاين:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

الانترنت

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

مواد مشابهة