Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

গ্রন্থ-পঞ্জীর বিবরন
প্রধান লেখক: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
অন্যান্য লেখক: Department of Electrical and Electronic Engineering, BRAC University
বিন্যাস: Conference paper
ভাষা:English
প্রকাশিত: © 2016 IEEE 2017
বিষয়গুলি:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
অনলাইন ব্যবহার করুন:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

আন্তর্জাল

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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