Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor

This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the definite version is available at : https://10.1109/TENCON.2016.7848543. The article website is at: http://ieeexplore.ieee.org/document/7848543/

Бібліографічні деталі
Автори: Tasneem, Nujhat, Adnan, Md. Mohsinur Rahman, Hafiz, Md. Samzid Bin
Інші автори: Department of Electrical and Electronic Engineering, BRAC University
Формат: Conference paper
Мова:English
Опубліковано: © 2016 IEEE 2017
Предмети:
Logic gates
Threshold voltage
Capacitance-voltage characteristics
Doping
Silicon
Junction less transistor
Онлайн доступ:http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

Інтернет

http://hdl.handle.net/10361/8083
https://10.1109/TENCON.2016.7848543

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