Field effect devices /

Eitemau Tebyg

• Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs /
  gan: Liu, William
  Cyhoeddwyd: (1999)
• Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
  gan: Afsin, Muntasirul Haque, et al.
  Cyhoeddwyd: (2017)
• Nanometer CMOS /
  gan: Schwierz, Frank
  Cyhoeddwyd: (2010)
• Analysis of bulk negative capacitance field effect transistor
  gan: Rahman, Towfiqur, et al.
  Cyhoeddwyd: (2017)
• Semiconductor fundamentals /
  gan: Pierret, Robert F.
  Cyhoeddwyd: (1988)