An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
| 主要な著者: | , , , |
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| その他の著者: | |
| フォーマット: | 学位論文 |
| 言語: | English |
| 出版事項: |
BRAC University
2017
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| 主題: | |
| オンライン･アクセス: | http://hdl.handle.net/10361/8640 |