An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
| Автори: | , , , |
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| Інші автори: | |
| Формат: | Дисертація |
| Мова: | English |
| Опубліковано: |
BRAC University
2017
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| Предмети: | |
| Онлайн доступ: | http://hdl.handle.net/10361/8640 |