An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
| मुख्य लेखकों: | , , , |
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| अन्य लेखक: | |
| स्वरूप: | थीसिस |
| भाषा: | English |
| प्रकाशित: |
BRAC University
2017
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| विषय: | |
| ऑनलाइन पहुंच: | http://hdl.handle.net/10361/8640 |