An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
| المؤلفون الرئيسيون: | , , , |
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| مؤلفون آخرون: | |
| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
BRAC University
2017
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://hdl.handle.net/10361/8640 |