An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Saif, Omar, Pavel, Md. Fazle Rabbi, Hasan, Md. Akib, Shah, Asif
Rannpháirtithe:	Das, Avijit
Formáid:	Tráchtas
Teanga:	English
Foilsithe / Cruthaithe:	BRAC University 2017
Ábhair:	IGBT MOSFET structure Punch Through (PT) bipolar Junction Transistor (BJT).
Rochtain ar líne:	http://hdl.handle.net/10361/8640

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