An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Bibliographische Detailangaben
Hauptverfasser:	Saif, Omar, Pavel, Md. Fazle Rabbi, Hasan, Md. Akib, Shah, Asif
Weitere Verfasser:	Das, Avijit
Format:	Abschlussarbeit
Sprache:	English
Veröffentlicht:	BRAC University 2017
Schlagworte:	IGBT MOSFET structure Punch Through (PT) bipolar Junction Transistor (BJT).
Online Zugang:	http://hdl.handle.net/10361/8640

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