An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Bibliographic Details
Main Authors: Saif, Omar, Pavel, Md. Fazle Rabbi, Hasan, Md. Akib, Shah, Asif
Other Authors: Das, Avijit
Format: Thesis
Language:English
Published: BRAC University 2017
Subjects:
IGBT
MOSFET structure
Punch Through (PT)
bipolar Junction Transistor (BJT).
Online Access:http://hdl.handle.net/10361/8640

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