An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Dettagli Bibliografici
Autori principali:	Saif, Omar, Pavel, Md. Fazle Rabbi, Hasan, Md. Akib, Shah, Asif
Altri autori:	Das, Avijit
Natura:	Tesi
Lingua:	English
Pubblicazione:	BRAC University 2017
Soggetti:	IGBT MOSFET structure Punch Through (PT) bipolar Junction Transistor (BJT).
Accesso online:	http://hdl.handle.net/10361/8640

id	10361-8640
record_format	dspace
spelling	10361-86402019-09-30T03:10:14Z An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics Saif, Omar Pavel, Md. Fazle Rabbi Hasan, Md. Akib Shah, Asif Das, Avijit Department of Electrical and Electronic Engineering, BRAC University IGBT MOSFET structure Punch Through (PT) bipolar Junction Transistor (BJT). This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017. Cataloged from PDF version of thesis. Includes bibliographical references (page 72). The IGBT (Insulated gate bipolar transistor) is driven by MOSFET and has been modeled as a wide-base bipolar junction transistor (BJT). In our thesis we are proposing to make a new physical-base model for a punch though (PT) IGBT. By manipulating the different region length, depth and doping we will try to obtain better threshold and I-V relation regarding IGBT characteristics and make a new extended model with proper research on its transient characteristics. Omar Saif Md. Fazle Rabbi Pavel Md. Akib Hasan Asif Shah B. Electrical and Electronic Engineering 2017-12-19T05:11:28Z 2017-12-19T05:11:28Z 2017 2017-08-20 Thesis ID 13121051 ID 13121069 ID 13121100 ID 14221027 http://hdl.handle.net/10361/8640 en BRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 102 pages application/pdf BRAC University
institution	Brac University
collection	Institutional Repository
language	English
topic	IGBT MOSFET structure Punch Through (PT) bipolar Junction Transistor (BJT).
spellingShingle	IGBT MOSFET structure Punch Through (PT) bipolar Junction Transistor (BJT). Saif, Omar Pavel, Md. Fazle Rabbi Hasan, Md. Akib Shah, Asif An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
description	This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
author2	Das, Avijit
author_facet	Das, Avijit Saif, Omar Pavel, Md. Fazle Rabbi Hasan, Md. Akib Shah, Asif
format	Thesis
author	Saif, Omar Pavel, Md. Fazle Rabbi Hasan, Md. Akib Shah, Asif
author_sort	Saif, Omar
title	An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
title_short	An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
title_full	An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
title_fullStr	An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
title_full_unstemmed	An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
title_sort	extended model for a punch through (pt) insulated gate bipolar transistor (igbt) and its transient characteristics
publisher	BRAC University
publishDate	2017
url	http://hdl.handle.net/10361/8640
work_keys_str_mv	AT saifomar anextendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics AT pavelmdfazlerabbi anextendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics AT hasanmdakib anextendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics AT shahasif anextendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics AT saifomar extendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics AT pavelmdfazlerabbi extendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics AT hasanmdakib extendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics AT shahasif extendedmodelforapunchthroughptinsulatedgatebipolartransistorigbtanditstransientcharacteristics
_version_	1814307620203266048

An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics

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