APA引文

Saif, O., Pavel, M. F. R., Hasan, M. A., Shah, A., & Das, A. (2017). An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics. BRAC University.

Chicago Style (17th ed.) Citation

Saif, Omar, Md. Fazle Rabbi Pavel, Md. Akib Hasan, Asif Shah, and Avijit Das. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.

MLA引文

Saif, Omar, et al. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.