Saif, O., Pavel, M. F. R., Hasan, M. A., Shah, A., & Das, A. (2017). An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics. BRAC University.
Цитирование в стиле Чикаго (17-е изд.)Saif, Omar, Md. Fazle Rabbi Pavel, Md. Akib Hasan, Asif Shah, и Avijit Das. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.
Цитирование MLA (8-е изд.)Saif, Omar, et al. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.
Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.