Citazione Stile APA (7a Edizione)

Saif, O., Pavel, M. F. R., Hasan, M. A., Shah, A., & Das, A. (2017). An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics. BRAC University.

Citazione stile Chigago Style (17a edizione)

Saif, Omar, Md. Fazle Rabbi Pavel, Md. Akib Hasan, Asif Shah, e Avijit Das. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.

Citatione MLA (8a ed.)

Saif, Omar, et al. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.