Style de citation APA (7e éd.)

Saif, O., Pavel, M. F. R., Hasan, M. A., Shah, A., & Das, A. (2017). An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics. BRAC University.

Style de citation Chicago (17e éd.)

Saif, Omar, Md. Fazle Rabbi Pavel, Md. Akib Hasan, Asif Shah, et Avijit Das. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.

Style de citation MLA (8e éd.)

Saif, Omar, et al. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.