APA (7 ম সংস্করণ) উদ্ধৃতি

Saif, O., Pavel, M. F. R., Hasan, M. A., Shah, A., & Das, A. (2017). An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics. BRAC University.

শিকাগো স্টাইল (17 তম সংস্করণ) উদ্ধৃতি

Saif, Omar, Md. Fazle Rabbi Pavel, Md. Akib Hasan, Asif Shah, এবং Avijit Das. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.

M.L.A (8 ম সংস্করণ) উদ্ধৃতি

Saif, Omar, et al. An Extended Model for a Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT) and Its Transient Characteristics. BRAC University, 2017.