Mixed FBB and RBB low leakage technique for high durable CMOS circuit

Mixed FBB and RBB low leakage technique for high durable CMOS circuit

This conference paper was presented in the 2014 International Conference on Informatics, Electronics and Vision, ICIEV 2014; Dhaka; Bangladesh; 23 May 2014 through 24 May 2014 [© 2014 IEEE Computer Society] The conference paper's definite version is available at: http://10.1109/ICIEV.2014.6850...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Barua, Parag, Jafar, Imran Bin, Sengupta, Prianka, Noor, Md Sadaf
Muut tekijät: Department of Electrical and Electronic Engineering
Aineistotyyppi: Conference Paper
Kieli:English
Julkaistu: © 2014 IEEE Computer Society 2016
Aiheet:
BB-Back Bias
CMOS Circuits
FBB-Forward Back Bias
Gate leakage
Leakage current
Low leakage
Low Power VLSI
RBBReverse Back Bias
Tunneling current
Linkit:http://hdl.handle.net/10361/7035

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