Mixed FBB and RBB low leakage technique for high durable CMOS circuit

Mixed FBB and RBB low leakage technique for high durable CMOS circuit

This conference paper was presented in the 2014 International Conference on Informatics, Electronics and Vision, ICIEV 2014; Dhaka; Bangladesh; 23 May 2014 through 24 May 2014 [© 2014 IEEE Computer Society] The conference paper's definite version is available at: http://10.1109/ICIEV.2014.6850...

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Hlavní autoři: Barua, Parag, Jafar, Imran Bin, Sengupta, Prianka, Noor, Md Sadaf
Další autoři: Department of Electrical and Electronic Engineering
Médium: Conference Paper
Jazyk:English
Vydáno: © 2014 IEEE Computer Society 2016
Témata:
BB-Back Bias
CMOS Circuits
FBB-Forward Back Bias
Gate leakage
Leakage current
Low leakage
Low Power VLSI
RBBReverse Back Bias
Tunneling current
On-line přístup:http://hdl.handle.net/10361/7035

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