Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths
This article was published in Micro and Nano Letters [© 2015 Published by The Institution of Engineering and Technology] and the definite version is available at: http://doi.org/10.1049/mnl.2015.0193
| 主要な著者: | , , |
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| その他の著者: | |
| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
© 2015 The Institution of Engineering and Technology.
2016
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| オンライン･アクセス: | http://hdl.handle.net/10361/6996 |