Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths
This article was published in Micro and Nano Letters [© 2015 Published by The Institution of Engineering and Technology] and the definite version is available at: http://doi.org/10.1049/mnl.2015.0193
| Հիմնական հեղինակներ: | , , |
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| Այլ հեղինակներ: | |
| Ձևաչափ: | Հոդված |
| Լեզու: | English |
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© 2015 The Institution of Engineering and Technology.
2016
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| Առցանց հասանելիություն: | http://hdl.handle.net/10361/6996 |