Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

This article was published in Micro and Nano Letters [© 2015 Published by The Institution of Engineering and Technology] and the definite version is available at: http://doi.org/10.1049/mnl.2015.0193

Chi tiết về thư mục
Những tác giả chính:	Ahmed, Sheikh Ziauddin, Shawkat, Mashiyat Sumaiya, Chowdhury, Md Iramul Hoque
Tác giả khác:	Department of Electrical and Electronic Engineering
Định dạng:	Bài viết
Ngôn ngữ:	English
Được phát hành:	© 2015 The Institution of Engineering and Technology. 2016
Truy cập trực tuyến:	http://hdl.handle.net/10361/6996

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