Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths

This article was published in Micro and Nano Letters [© 2015 Published by The Institution of Engineering and Technology] and the definite version is available at: http://doi.org/10.1049/mnl.2015.0193

Bibliografische gegevens
Hoofdauteurs:	Ahmed, Sheikh Ziauddin, Shawkat, Mashiyat Sumaiya, Chowdhury, Md Iramul Hoque
Andere auteurs:	Department of Electrical and Electronic Engineering
Formaat:	Artikel
Taal:	English
Gepubliceerd in:	© 2015 The Institution of Engineering and Technology. 2016
Online toegang:	http://hdl.handle.net/10361/6996

Gelijkaardige items

Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
door: Rouf, Nirjhor Tahmidur, et al.
Gepubliceerd in: (2014)

Comparison of the performance of ballistic schottky barrier graphene nanoribbon FET
door: Ahmed, Sheikh Ziauddin, et al.
Gepubliceerd in: (2014)

Characterization of Carbon Nanotube field effect transistor
door: Khan, Sabbir Ahmed, et al.
Gepubliceerd in: (2013)

Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
door: Ahmed, Sheikh Ziauddin, et al.
Gepubliceerd in: (2016)

Organic Field Effect Transistors

Fundamentals of Nanoscaled Field Effect Transistors
door: Chaudhry
Gepubliceerd in: (2013)

Organic Field-Effect Transistors XV

Organic Field-Effect Transistors IX

Organic Field-Effect Transistors XVII

Organic Field-Effect Transistors III

Organic Field-Effect Transistors IV

Organic Field-Effect Transistors V

Organic Field-Effect Transistors VIII

Organic Field-Effect Transistors XVI

Organic Field-Effect Transistors XI

Organic Field-Effect Transistors X

Organic Field Effect Transistors II

Organic Field-Effect Transistors VI

Graphene based Solution Gated Field-Effect Transistors (SGFET) for biosensors
door: Sarker, Abdullah Hossain, et al.
Gepubliceerd in: (2018)

Graphene based nano scale heat spreader in field effect transistor
door: Ashrafi, Shafana, et al.
Gepubliceerd in: (2017)

Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications
door: Pavel, Md. Reaz Haider
Gepubliceerd in: (2016)

Organic and Hybrid Field-Effect Transistors XIX

Organic and Hybrid Field-Effect Transistors XXI

Organic and Hybrid Field-Effect Transistors XX

Organic and Hybrid Field-Effect Transistors XVIII

Analysis of bulk negative capacitance field effect transistor
door: Rahman, Towfiqur, et al.
Gepubliceerd in: (2017)

Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics

Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII

Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR
door: Ali, Abrar Mohammad, et al.
Gepubliceerd in: (2018)

Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII

Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI

Bandstru cture observation of graphene nanoribb on and boron-nitride nanoribbon embedded graphene nanoribbon
door: Haque, Fatin Farhan, et al.
Gepubliceerd in: (2016)

Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
door: Mondol, Raktim Kumar, et al.
Gepubliceerd in: (2016)

Single molecular transistor
door: Mitra, Kangkan, et al.
Gepubliceerd in: (2018)

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors
door: Haque, Tausif Omar, et al.
Gepubliceerd in: (2015)

Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor
door: Tasneem, Nujhat, et al.
Gepubliceerd in: (2017)

Field effect devices /
door: Pierret, Robert F.
Gepubliceerd in: (1990)

Introduction to Thin Film Transistors
door: Brotherton
Gepubliceerd in: (2013)

Organic and Hybrid Transistors XXII

Carbon Nanotubes, Graphene, and Associated Devices VII