APA引文

Ahmed, S. Z., Shawkat, M. S., Chowdhury, M. I. H., & Engineering, D. o. E. a. E. (2016). Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths. © 2015 The Institution of Engineering and Technology.

Chicago Style (17th ed.) Citation

Ahmed, Sheikh Ziauddin, Mashiyat Sumaiya Shawkat, Md Iramul Hoque Chowdhury, and Department of Electrical and Electronic Engineering. Gate Dielectric Material Dependence of Current-voltage Characteristics of Ballistic Schottky Barrier Graphene Nanoribbon Field-effect Transistor and Carbon Nanotube Field-effect Transistor for Different Channel Lengths. © 2015 The Institution of Engineering and Technology, 2016.

MLA引文

Ahmed, Sheikh Ziauddin, et al. Gate Dielectric Material Dependence of Current-voltage Characteristics of Ballistic Schottky Barrier Graphene Nanoribbon Field-effect Transistor and Carbon Nanotube Field-effect Transistor for Different Channel Lengths. © 2015 The Institution of Engineering and Technology, 2016.