Ahmed, S. Z., Shawkat, M. S., Chowdhury, M. I. H., & Engineering, D. o. E. a. E. (2016). Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths. © 2015 The Institution of Engineering and Technology.
Trích dẫn kiểu Chicago (xuất bản lần thứ 7)Ahmed, Sheikh Ziauddin, Mashiyat Sumaiya Shawkat, Md Iramul Hoque Chowdhury, và Department of Electrical and Electronic Engineering. Gate Dielectric Material Dependence of Current-voltage Characteristics of Ballistic Schottky Barrier Graphene Nanoribbon Field-effect Transistor and Carbon Nanotube Field-effect Transistor for Different Channel Lengths. © 2015 The Institution of Engineering and Technology, 2016.
Trích dẫn kiểu MLA (xuất bản lần thứ 8)Ahmed, Sheikh Ziauddin, et al. Gate Dielectric Material Dependence of Current-voltage Characteristics of Ballistic Schottky Barrier Graphene Nanoribbon Field-effect Transistor and Carbon Nanotube Field-effect Transistor for Different Channel Lengths. © 2015 The Institution of Engineering and Technology, 2016.