Ahmed, S. Z., Shawkat, M. S., Chowdhury, M. I. H., & Engineering, D. o. E. a. E. (2016). Gate dielectric material dependence of current-voltage characteristics of ballistic Schottky barrier graphene nanoribbon field-effect transistor and carbon nanotube field-effect transistor for different channel lengths. © 2015 The Institution of Engineering and Technology.
Citação do estilo Chicago (17ª ed.)Ahmed, Sheikh Ziauddin, Mashiyat Sumaiya Shawkat, Md Iramul Hoque Chowdhury, e Department of Electrical and Electronic Engineering. Gate Dielectric Material Dependence of Current-voltage Characteristics of Ballistic Schottky Barrier Graphene Nanoribbon Field-effect Transistor and Carbon Nanotube Field-effect Transistor for Different Channel Lengths. © 2015 The Institution of Engineering and Technology, 2016.
Citação MLA (8ª ed.)Ahmed, Sheikh Ziauddin, et al. Gate Dielectric Material Dependence of Current-voltage Characteristics of Ballistic Schottky Barrier Graphene Nanoribbon Field-effect Transistor and Carbon Nanotube Field-effect Transistor for Different Channel Lengths. © 2015 The Institution of Engineering and Technology, 2016.