Transient anode voltage modeling of IGBT and its base doping profile investigation

Transient anode voltage modeling of IGBT and its base doping profile investigation

This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electron...

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Dettagli Bibliografici
Autori principali: Das, Avijit, Md Ziaur Rahman, Khan
Altri autori: Department of Electrical and Electronic Engineering, BRAC University
Natura: Conference paper
Lingua:English
Pubblicazione: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Soggetti:
Base doping concentration
Carrier storage region
Minority carrier lifetime
Parabolic approximation
Transient anode voltage
Accesso online:http://hdl.handle.net/10361/6900

Accesso online

http://hdl.handle.net/10361/6900

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