Transient anode voltage modeling of IGBT and its base doping profile investigation

Transient anode voltage modeling of IGBT and its base doping profile investigation

This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electron...

תיאור מלא

מידע ביבליוגרפי
Main Authors: Das, Avijit, Md Ziaur Rahman, Khan
מחברים אחרים: Department of Electrical and Electronic Engineering, BRAC University
פורמט: Conference paper
שפה:English
יצא לאור: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
נושאים:
Base doping concentration
Carrier storage region
Minority carrier lifetime
Parabolic approximation
Transient anode voltage
גישה מקוונת:http://hdl.handle.net/10361/6900

אינטרנט

http://hdl.handle.net/10361/6900

פריטים דומים