Transient anode voltage modeling of IGBT and its base doping profile investigation

Transient anode voltage modeling of IGBT and its base doping profile investigation

This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electron...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak: Das, Avijit, Md Ziaur Rahman, Khan
Beste egile batzuk: Department of Electrical and Electronic Engineering, BRAC University
Formatua: Conference paper
Hizkuntza:English
Argitaratua: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Gaiak:
Base doping concentration
Carrier storage region
Minority carrier lifetime
Parabolic approximation
Transient anode voltage
Sarrera elektronikoa:http://hdl.handle.net/10361/6900

Internet

http://hdl.handle.net/10361/6900

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