Transient anode voltage modeling of IGBT and its base doping profile investigation

This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electron...

Bibliografiset tiedot
Päätekijät:	Das, Avijit, Md Ziaur Rahman, Khan
Muut tekijät:	Department of Electrical and Electronic Engineering, BRAC University
Aineistotyyppi:	Conference paper
Kieli:	English
Julkaistu:	© 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Aiheet:	Base doping concentration Carrier storage region Minority carrier lifetime Parabolic approximation Transient anode voltage
Linkit:	http://hdl.handle.net/10361/6900

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