Transient anode voltage modeling of IGBT and its base doping profile investigation

Transient anode voltage modeling of IGBT and its base doping profile investigation

This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electron...

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Hlavní autoři: Das, Avijit, Md Ziaur Rahman, Khan
Další autoři: Department of Electrical and Electronic Engineering, BRAC University
Médium: Conference paper
Jazyk:English
Vydáno: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Témata:
Base doping concentration
Carrier storage region
Minority carrier lifetime
Parabolic approximation
Transient anode voltage
On-line přístup:http://hdl.handle.net/10361/6900
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Shrnutí:This conference paper was presented in the 18th International Conference on Computer and Information Technology, ICCIT 2015; Military Institute of Science and Technology (MIST) Mirpur Cantonment Dhaka; Bangladesh; 21 December 2015 through 23 December 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICCITechn.2015.7488054

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