Стиль цитування APA (7-ме видання)

Das, A., Md Ziaur Rahman, K., & Department of Electrical and Electronic Engineering, B. U. (2016). Transient anode voltage modeling of IGBT and its base doping profile investigation. © 2015 Institute of Electrical and Electronics Engineers Inc.

Чикаго стиль цитування (17-те видання)

Das, Avijit, Khan Md Ziaur Rahman, та BRAC University Department of Electrical and Electronic Engineering. Transient Anode Voltage Modeling of IGBT and Its Base Doping Profile Investigation. © 2015 Institute of Electrical and Electronics Engineers Inc, 2016.

Стиль цитування MLA (8-ме видання)

Das, Avijit, et al. Transient Anode Voltage Modeling of IGBT and Its Base Doping Profile Investigation. © 2015 Institute of Electrical and Electronics Engineers Inc, 2016.