Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs /
Yazar: | Liu, William |
---|---|
Materyal Türü: | Kitap |
Dil: | English |
Baskı/Yayın Bilgisi: |
New York :
Wiley,
c1999.
|
Konular: | |
Classic Catalogue: | View this record in Classic Catalogue |
Benzer Materyaller
-
Field effect devices /
Yazar:: Pierret, Robert F.
Baskı/Yayın Bilgisi: (1990) -
Nanometer CMOS /
Yazar:: Schwierz, Frank
Baskı/Yayın Bilgisi: (2010) -
Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
Yazar:: Afsin, Muntasirul Haque, ve diğerleri
Baskı/Yayın Bilgisi: (2017) -
Computational study of electronic transport property of a quantum dot in a single electron transistor
Yazar:: Noor, Lamisha
Baskı/Yayın Bilgisi: (2018) -
Performance evolution of Spin Valve transistor
Yazar:: Rashid, Shahriar, ve diğerleri
Baskı/Yayın Bilgisi: (2019)