Fundamentals of III-V devices : HBTs, MESFETs, and HFETs/HEMTs /

Eitemau Tebyg

• Field effect devices /
  gan: Pierret, Robert F.
  Cyhoeddwyd: (1990)
• Nanometer CMOS /
  gan: Schwierz, Frank
  Cyhoeddwyd: (2010)
• Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
  gan: Afsin, Muntasirul Haque, et al.
  Cyhoeddwyd: (2017)
• Computational study of electronic transport property of a quantum dot in a single electron transistor
  gan: Noor, Lamisha
  Cyhoeddwyd: (2018)
• Performance evolution of Spin Valve transistor
  gan: Rashid, Shahriar, et al.
  Cyhoeddwyd: (2019)