Transient anode voltage modeling of IGBT and its carrier lifetime dependence
This conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sands Cotai CentralMacau; Macau; 1 November 2015 through 4 November 2015 [© 2015 IEEE] and the definite version is available at : http://doi.org/10.1109/TENCON.2015.7372970 The Journal's website is a...
Auteurs principaux: | Das, Avijit, Islam, Nazmul, Haq, Masud Ul, Khan, Ziaurrahman |
---|---|
Autres auteurs: | Department of Electrical and Electronic Engineering, BRAC University |
Format: | Conference paper |
Langue: | English |
Publié: |
© 2015 IEEE
2018
|
Sujets: | |
Accès en ligne: | http://hdl.handle.net/10361/9886 http://doi.org/10.1109/TENCON.2015.7372970 |
Documents similaires
-
Transient anode voltage modeling of IGBT and its base doping profile investigation
par: Das, Avijit, et autres
Publié: (2016) -
Temperature dependence of the transient characteristics in NPT IGBT using linear and parabolic model
par: Tania, Shoulin, et autres
Publié: (2017) -
Determinants of cross-selling opportunities impacting customer lifetime value at Runner Automobile PLC
par: Hossain, Mokammel
Publié: (2024) -
Investigation into IGBT transient characteristics and calculation of switching power loss
par: Hasan, Rifatul, et autres
Publié: (2017) -
Study and analysis of switching transients in high voltage transmission line
par: Ahmed, Prottasha, et autres
Publié: (2018)