Transient anode voltage modeling of IGBT and its carrier lifetime dependence

This conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sands Cotai CentralMacau; Macau; 1 November 2015 through 4 November 2015 [© 2015 IEEE] and the definite version is available at : http://doi.org/10.1109/TENCON.2015.7372970 The Journal's website is a...

Celý popis

Podrobná bibliografie
Hlavní autoři: Das, Avijit, Islam, Nazmul, Haq, Masud Ul, Khan, Ziaurrahman
Další autoři: Department of Electrical and Electronic Engineering, BRAC University
Médium: Conference paper
Jazyk:English
Vydáno: © 2015 IEEE 2018
Témata:
On-line přístup:http://hdl.handle.net/10361/9886
http://doi.org/10.1109/TENCON.2015.7372970
id 10361-9886
record_format dspace
spelling 10361-98862018-04-17T05:55:15Z Transient anode voltage modeling of IGBT and its carrier lifetime dependence Das, Avijit Islam, Nazmul Haq, Masud Ul Khan, Ziaurrahman Department of Electrical and Electronic Engineering, BRAC University Carrier lifetime control Effective base width Minority carrier lifetime Parabolic approximation Transient Anode Voltage This conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sands Cotai CentralMacau; Macau; 1 November 2015 through 4 November 2015 [© 2015 IEEE] and the definite version is available at : http://doi.org/10.1109/TENCON.2015.7372970 The Journal's website is at: https://ieeexplore.ieee.org/document/7372970/ This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation has been used for derivation of minority carrier concentration within the base. With the help of derived expression, an analytical model has been developed for turn-off voltage of IGBT in all minority carrier lifetime conditions. Better agreements with experimental data have been found compared to the linear model generally used. Finally, the implications of carrier lifetime dependence on the anode voltage are discussed, including implementation of such a carrier lifetime measurement technique. Published 2018-04-17T05:53:45Z 2018-04-17T05:53:45Z 2015-11 Conference paper Das, A., Islam, N., Haq, M. -., & Khan, Z. R. (2016). Transient anode voltage modeling of IGBT and its carrier lifetime dependence. Paper presented at the IEEE Region 10 Annual International Conference, Proceedings/TENCON, , 2016-January doi:10.1109/TENCON.2015.7372970 978-147998641-5 21593442 http://hdl.handle.net/10361/9886 http://doi.org/10.1109/TENCON.2015.7372970 en https://ieeexplore.ieee.org/document/7372970/ © 2015 IEEE
institution Brac University
collection Institutional Repository
language English
topic Carrier lifetime control
Effective base width
Minority carrier lifetime
Parabolic approximation
Transient Anode Voltage
spellingShingle Carrier lifetime control
Effective base width
Minority carrier lifetime
Parabolic approximation
Transient Anode Voltage
Das, Avijit
Islam, Nazmul
Haq, Masud Ul
Khan, Ziaurrahman
Transient anode voltage modeling of IGBT and its carrier lifetime dependence
description This conference paper was published in the IEEE Region 10 Conference, TENCON 2015; Holiday Inn, Sands Cotai CentralMacau; Macau; 1 November 2015 through 4 November 2015 [© 2015 IEEE] and the definite version is available at : http://doi.org/10.1109/TENCON.2015.7372970 The Journal's website is at: https://ieeexplore.ieee.org/document/7372970/
author2 Department of Electrical and Electronic Engineering, BRAC University
author_facet Department of Electrical and Electronic Engineering, BRAC University
Das, Avijit
Islam, Nazmul
Haq, Masud Ul
Khan, Ziaurrahman
format Conference paper
author Das, Avijit
Islam, Nazmul
Haq, Masud Ul
Khan, Ziaurrahman
author_sort Das, Avijit
title Transient anode voltage modeling of IGBT and its carrier lifetime dependence
title_short Transient anode voltage modeling of IGBT and its carrier lifetime dependence
title_full Transient anode voltage modeling of IGBT and its carrier lifetime dependence
title_fullStr Transient anode voltage modeling of IGBT and its carrier lifetime dependence
title_full_unstemmed Transient anode voltage modeling of IGBT and its carrier lifetime dependence
title_sort transient anode voltage modeling of igbt and its carrier lifetime dependence
publisher © 2015 IEEE
publishDate 2018
url http://hdl.handle.net/10361/9886
http://doi.org/10.1109/TENCON.2015.7372970
work_keys_str_mv AT dasavijit transientanodevoltagemodelingofigbtanditscarrierlifetimedependence
AT islamnazmul transientanodevoltagemodelingofigbtanditscarrierlifetimedependence
AT haqmasudul transientanodevoltagemodelingofigbtanditscarrierlifetimedependence
AT khanziaurrahman transientanodevoltagemodelingofigbtanditscarrierlifetimedependence
_version_ 1814307183368601600