Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Bibliografski detalji
Glavni autori:	Ali, Abrar Mohammad, Gharami, Devleena, Mimi, Niger Sultana
Daljnji autori:	Rhaman, Dr. Md. Khalilur
Format:	Disertacija
Jezik:	English
Izdano:	BRAC University 2018
Teme:	Graphene NanoRibbon Two Dimensional Nanotechnology Ab Initio H 2 O molecules adsorption Semiconducting GNR
Online pristup:	http://hdl.handle.net/10361/9133

id	10361-9133
record_format	dspace
spelling	10361-91332023-01-23T09:08:38Z Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR Ali, Abrar Mohammad Gharami, Devleena Mimi, Niger Sultana Rhaman, Dr. Md. Khalilur Shakil, Shifur Rahman Department of Electrical and Electronic Engineering, BRAC University Graphene NanoRibbon Two Dimensional Nanotechnology Ab Initio H 2 O molecules adsorption Semiconducting GNR This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017. Cataloged from PDF version of thesis. Includes bibliographical references (page 66-67). Two Dimensional (2D) Graphene NanoRibbon (GNR) based devices have grabbed the attention of scientists associated with different fields of science and technology due to their unique structural, mechanical and electronic properties. The potential uses of those materials can be for chemical vapor sensors, photo sensors, high performance photo detectors and field effect transistor. Our research is characterized by modelling graphene devices and differing their atomic level width. Next, we observed the induced quantum transport properties and their effects in nanoscale semiconductor devices. Moreover, we analyzed the molecular adsorption process on graphene and observed the changes in sensor properties. The simulated results are then implemented in the circuit simulation to evaluated the quantum mechanical robustness of the classical functionality of digital circuits designed by the modern nanotechnology. Abrar Mohammad Ali Devleena Gharami Niger Sultana Mimi B. Electrical and Electronic Engineering 2018-01-22T08:55:05Z 2018-01-22T08:55:05Z 2017 2017-12 Thesis ID 13301008 ID 13121121 ID 13121132 http://hdl.handle.net/10361/9133 en BRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 67 pages 67 pages application/pdf BRAC University
institution	Brac University
collection	Institutional Repository
language	English
topic	Graphene NanoRibbon Two Dimensional Nanotechnology Ab Initio H 2 O molecules adsorption Semiconducting GNR
spellingShingle	Graphene NanoRibbon Two Dimensional Nanotechnology Ab Initio H 2 O molecules adsorption Semiconducting GNR Ali, Abrar Mohammad Gharami, Devleena Mimi, Niger Sultana Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR
description	This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
author2	Rhaman, Dr. Md. Khalilur
author_facet	Rhaman, Dr. Md. Khalilur Ali, Abrar Mohammad Gharami, Devleena Mimi, Niger Sultana
format	Thesis
author	Ali, Abrar Mohammad Gharami, Devleena Mimi, Niger Sultana
author_sort	Ali, Abrar Mohammad
title	Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR
title_short	Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR
title_full	Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR
title_fullStr	Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR
title_full_unstemmed	Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR
title_sort	simulation of atomic level width controlled graphene nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting gnr
publisher	BRAC University
publishDate	2018
url	http://hdl.handle.net/10361/9133
work_keys_str_mv	AT aliabrarmohammad simulationofatomiclevelwidthcontrolledgraphenenanoribbonfieldeffecttransistorsandanabinitiostudyofh2omoleculesadsorptiononsemiconductinggnr AT gharamidevleena simulationofatomiclevelwidthcontrolledgraphenenanoribbonfieldeffecttransistorsandanabinitiostudyofh2omoleculesadsorptiononsemiconductinggnr AT miminigersultana simulationofatomiclevelwidthcontrolledgraphenenanoribbonfieldeffecttransistorsandanabinitiostudyofh2omoleculesadsorptiononsemiconductinggnr
_version_	1814307706606977024

Simulation of atomic level width controlled graphene Nanoribbon field effect transistors and an ab initio study of h 2 o molecules adsorption on semiconducting GNR

Similar Items