Analysis of bulk negative capacitance field effect transistor

Analysis of bulk negative capacitance field effect transistor

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Bibliografische gegevens
Hoofdauteurs: Rahman, Towfiqur, Khan, Antara Fairooz, Nawal, Nowshin
Andere auteurs: Noor, Samantha Lubaba
Formaat: Thesis
Taal:English
Gepubliceerd in: BRAC University 2017
Onderwerpen:
NCFET
MOSFET structure
Transistor
Shockley-Read
Lombardi CVT
TCAD model
Online toegang:http://hdl.handle.net/10361/8625

Internet

http://hdl.handle.net/10361/8625

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